| Literature DB >> 20666468 |
Kai Huang1, Renaud Demadrille, Mathieu G Silly, Fausto Sirotti, Peter Reiss, Olivier Renault.
Abstract
High-energy resolution photoelectron spectroscopy (DeltaE < 200 meV) is used to investigate the internal structure of semiconductor quantum dots containing low Z-contrast elements. In InP/ZnS core/shell nanocrystals synthesized using a single-step procedure (core and shell precursors added at the same time), a homogeneously alloyed InPZnS core structure is evidenced by quantitative analysis of their In3d(5/2) spectra recorded at variable excitation energy. When using a two-step method (core InP nanocrystal synthesis followed by subsequent ZnS shell growth), XPS analysis reveals a graded core/shell interface. We demonstrate the existence of In-S and S(x)-In-P(1-x) bonding states in both types of InP/ZnS nanocrystals, which allows a refined view on the underlying reaction mechanisms.Entities:
Year: 2010 PMID: 20666468 DOI: 10.1021/nn100581t
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881