Literature DB >> 20588527

Room-temperature electroluminescence from Si microdisks with Ge quantum dots.

Jinsong Xia1, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, Yasuhiro Shiraki.   

Abstract

A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.

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Year:  2010        PMID: 20588527     DOI: 10.1364/OE.18.013945

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing.

Authors:  Bohdan Pavlyk; Markiyan Kushlyk; Dmytro Slobodzyan
Journal:  Nanoscale Res Lett       Date:  2017-05-19       Impact factor: 4.703

Review 2.  Germanium epitaxy on silicon.

Authors:  Hui Ye; Jinzhong Yu
Journal:  Sci Technol Adv Mater       Date:  2014-03-18       Impact factor: 8.090

  2 in total

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