Literature DB >> 20588362

All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals.

Jun Sakaguchi1, Takeo Katayama, Hitoshi Kawaguchi.   

Abstract

The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.

Entities:  

Year:  2010        PMID: 20588362     DOI: 10.1364/OE.18.012362

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

Review 1.  Optical RAM and integrated optical memories: a survey.

Authors:  Theoni Alexoudi; George Theodore Kanellos; Nikos Pleros
Journal:  Light Sci Appl       Date:  2020-05-25       Impact factor: 17.782

  1 in total

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