| Literature DB >> 20582069 |
S J Jiang, C B Ye, M S Khan, C G Granqvist.
Abstract
Thin vanadium oxide films were made by vacuum evaporation followed by the annealing posttreatment in the presence of air. The thickness increased by a factor as large as approximately 2.3 on oxidation. Electron diffractograms indicated a bcc ? monoclinic transformation during the annealing, and electron micrographs showed pronounced grain growth. Temperature-dependent electrical conductivity as well as spectral transmittance was measured vs annealing time. At an initial thickness of 0.12 microm, it took a few hours to establish VO(2) films with a well defined semiconductor-metal transition and concomitant thermochromic switching at approximately 57 degrees C.Entities:
Year: 1991 PMID: 20582069 DOI: 10.1364/AO.30.000847
Source DB: PubMed Journal: Appl Opt ISSN: 1559-128X Impact factor: 1.980