Literature DB >> 20578683

Flexible organic transistor memory devices.

Soo-Jin Kim1, Jang-Sik Lee.   

Abstract

The flexible nonvolatile organic memory devices were developed on the plastic substrates based on the organic thin-film transistors embedding self-assembled gold nanoparticles (Au(NP)). The organic memory devices exhibited good programmable memory characteristics with respect to the program/erase operations, resulting in controllable and reliable threshold voltage shifts. Additionally, the endurance, data retention, and bending cyclic measurements confirmed that the flexible memory devices exhibited good electrical reliability as well as mechanical stability. The memory devices were composed of the solution-processed organic dielectric layers/metallic nanoparticles and the low-temperature processed organic transistors. Therefore, this approach could potentially be applied to advanced flexible/plastic electronic devices as well as integrated organic device circuits.

Year:  2010        PMID: 20578683     DOI: 10.1021/nl1009662

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  21 in total

1.  Flexible molecular-scale electronic devices.

Authors:  Sungjun Park; Gunuk Wang; Byungjin Cho; Yonghun Kim; Sunghoon Song; Yongsung Ji; Myung-Han Yoon; Takhee Lee
Journal:  Nat Nanotechnol       Date:  2012-06-03       Impact factor: 39.213

2.  Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend.

Authors:  Tim Leydecker; Martin Herder; Egon Pavlica; Gvido Bratina; Stefan Hecht; Emanuele Orgiu; Paolo Samorì
Journal:  Nat Nanotechnol       Date:  2016-06-20       Impact factor: 39.213

3.  Non-volatile memory devices with redox-active diruthenium molecular compound.

Authors:  S Pookpanratana; H Zhu; E G Bittle; S N Natoli; T Ren; C A Richter; Q Li; C A Hacker
Journal:  J Phys Condens Matter       Date:  2016-02-12       Impact factor: 2.333

4.  Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

Authors:  Min Sup Choi; Gwan-Hyoung Lee; Young-Jun Yu; Dae-Yeong Lee; Seung Hwan Lee; Philip Kim; James Hone; Won Jong Yoo
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

5.  Cellulose nanofiber paper as an ultra flexible nonvolatile memory.

Authors:  Kazuki Nagashima; Hirotaka Koga; Umberto Celano; Fuwei Zhuge; Masaki Kanai; Sakon Rahong; Gang Meng; Yong He; Jo De Boeck; Malgorzata Jurczak; Wilfried Vandervorst; Takuya Kitaoka; Masaya Nogi; Takeshi Yanagida
Journal:  Sci Rep       Date:  2014-07-02       Impact factor: 4.379

6.  Solution processed molecular floating gate for flexible flash memories.

Authors:  Ye Zhou; Su-Ting Han; Yan Yan; Long-Biao Huang; Li Zhou; Jing Huang; V A L Roy
Journal:  Sci Rep       Date:  2013-10-31       Impact factor: 4.379

7.  Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability.

Authors:  Chulyeon Lee; Jooyeok Seo; Jeongnam Kim; Jaehoon Jeong; Hyemi Han; Hwajeong Kim; Youngkyoo Kim
Journal:  Sci Rep       Date:  2016-10-05       Impact factor: 4.379

8.  A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device.

Authors:  Ahmed N M Alahmadi; Khasan S Karimov
Journal:  Polymers (Basel)       Date:  2021-05-15       Impact factor: 4.329

9.  Photo-reactive charge trapping memory based on lanthanide complex.

Authors:  Jiaqing Zhuang; Wai-Sum Lo; Li Zhou; Qi-Jun Sun; Chi-Fai Chan; Ye Zhou; Su-Ting Han; Yan Yan; Wing-Tak Wong; Ka-Leung Wong; V A L Roy
Journal:  Sci Rep       Date:  2015-10-09       Impact factor: 4.379

10.  A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

Authors:  Jaemin Kim; Donghee Son; Mincheol Lee; Changyeong Song; Jun-Kyul Song; Ja Hoon Koo; Dong Jun Lee; Hyung Joon Shim; Ji Hoon Kim; Minbaek Lee; Taeghwan Hyeon; Dae-Hyeong Kim
Journal:  Sci Adv       Date:  2016-01-01       Impact factor: 14.136

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