| Literature DB >> 20576441 |
Guanquan Wang1, Rui Hu, Hongyuan Wei, Huaming Zhang, Yuqing Yang, Xiaoling Xiong, Guoping Liu, Shunzhong Luo.
Abstract
There is a significant relationship between temperature and electrical performance of a betavoltaic cell. Two silicon diodes used as energy conversion devices of betavoltaic cells were irradiated by Ni-63, and the relationships between the temperature and the electrical performance such as V(oc), I(sc), and P(max) were examined. I(sc) increased very little as temperature increased but V(oc) decreased considerably. The changing values of V(oc) were -3.1 and -3.0 mV/K, respectively, in the temperature range 233.15-333.15 K. As a result of this, P(max) and eta also decreased markedly. Copyright 2010 Elsevier Ltd. All rights reserved.Entities:
Year: 2010 PMID: 20576441 DOI: 10.1016/j.apradiso.2010.06.011
Source DB: PubMed Journal: Appl Radiat Isot ISSN: 0969-8043 Impact factor: 1.513