| Literature DB >> 20539564 |
M Krumrey, E Tegeler, J Barth, M Krisch, F Schäfers, R Wolf.
Abstract
The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 to 3500 eV. For silicon photodiodes strong radiation-induced effects were found. GaAsP and GaP Schottky diodes show remarkable stability and high quantum efficiency. Use of Schottky diodes for spectroscopic and radiometric measurements is discussed.Entities:
Year: 1988 PMID： 20539564 DOI： 10.1364/AO.27.004336
Source DB: PubMed Journal: Appl Opt ISSN： 1559-128X Impact factor: 1.980