Literature DB >> 20539459

Analytic representation of the silicon absorption coefficient in the indirect transition region.

J Geist, A Migdall, H P Baltes.   

Abstract

Entities:  

Year:  1988        PMID： 20539459     DOI： 10.1364/AO.27.003777

Source DB:  PubMed          Journal:  Appl Opt        ISSN： 1559-128X            Impact factor:   1.980


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  4 in total

Review 1.  A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications.

Authors:  Sylvain Feruglio; Guo-Neng Lu; Patrick Garda; Gabriel Vasilescu
Journal:  Sensors (Basel)       Date:  2008-10-23       Impact factor: 3.576

2.  Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs.

Authors:  Jon Geist; Deane Chandler-Horowitz; A M Robinson; C R James
Journal:  J Res Natl Inst Stand Technol       Date:  1991 Jul-Aug

3.  Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations.

Authors:  Jon Geist; A M Robinson; C R James
Journal:  J Res Natl Inst Stand Technol       Date:  1991 Jul-Aug

4.  Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments.

Authors:  Jon Geist; Rainer Köhler; Roland Goebel; A M Robinson; C R James
Journal:  J Res Natl Inst Stand Technol       Date:  1991 Jul-Aug
  4 in total

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