Literature DB >> 20512814

Direct identification of the conducting channels in a functioning memristive device.

John Paul Strachan1, Matthew D Pickett, J Joshua Yang, Shaul Aloni, A L David Kilcoyne, Gilberto Medeiros-Ribeiro, R Stanley Williams.   

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Year:  2010        PMID： 20512814     DOI： 10.1002/adma.201000186

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  18 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Spectromicroscopic insights for rational design of redox-based memristive devices.

Authors:  Christoph Baeumer; Christoph Schmitz; Amr H H Ramadan; Hongchu Du; Katharina Skaja; Vitaliy Feyer; Philipp Müller; Benedikt Arndt; Chun-Lin Jia; Joachim Mayer; Roger A De Souza; Claus Michael Schneider; Rainer Waser; Regina Dittmann
Journal:  Nat Commun       Date:  2015-10-19       Impact factor: 14.919

3.  Arithmetic and biologically-inspired computing using phase-change materials.

Authors:  C David Wright; Yanwei Liu; Krisztian I Kohary; Mustafa M Aziz; Robert J Hicken
Journal:  Adv Mater       Date:  2011-06-22       Impact factor: 30.849

4.  Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

Authors:  Sungho Kim; Sae-Jin Kim; Kyung Min Kim; Seung Ryul Lee; Man Chang; Eunju Cho; Young-Bae Kim; Chang Jung Kim; U -In Chung; In-Kyeong Yoo
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

5.  Scaling effect on unipolar and bipolar resistive switching of metal oxides.

Authors:  Takeshi Yanagida; Kazuki Nagashima; Keisuke Oka; Masaki Kanai; Annop Klamchuen; Bae Ho Park; Tomoji Kawai
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

6.  The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions.

Authors:  Hanni Xu; Yidong Xia; Kuibo Yin; Jianxin Lu; Qiaonan Yin; Jiang Yin; Litao Sun; Zhiguo Liu
Journal:  Sci Rep       Date:  2013-02-06       Impact factor: 4.379

7.  Characterization of electroforming-free titanium dioxide memristors.

Authors:  John Paul Strachan; J Joshua Yang; L A Montoro; C A Ospina; A J Ramirez; A L D Kilcoyne; Gilberto Medeiros-Ribeiro; R Stanley Williams
Journal:  Beilstein J Nanotechnol       Date:  2013-08-07       Impact factor: 3.649

8.  Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

Authors:  Seul Ji Song; Jun Yeong Seok; Jung Ho Yoon; Kyung Min Kim; Gun Hwan Kim; Min Hwan Lee; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2013-12-06       Impact factor: 4.379

9.  Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.

Authors:  Shinbuhm Lee; Abhijeet Sangle; Ping Lu; Aiping Chen; Wenrui Zhang; Jae Sung Lee; Haiyan Wang; Quanxi Jia; Judith L MacManus-Driscoll
Journal:  Adv Mater       Date:  2014-07-28       Impact factor: 30.849

10.  Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.

Authors:  Wei Yi; Sergey E Savel'ev; Gilberto Medeiros-Ribeiro; Feng Miao; M-X Zhang; J Joshua Yang; Alexander M Bratkovsky; R Stanley Williams
Journal:  Nat Commun       Date:  2016-04-04       Impact factor: 14.919
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