Literature DB >> 20503976

Gas detection with vertical InAs nanowire arrays.

Peter Offermans1, Mercedes Crego-Calama, Sywert H Brongersma.   

Abstract

Nanowire-based devices show great promise for next generation (bio)chemical sensors as evidenced by the large volume of high-quality publications. Here, a nanoscale gas sensing device is presented, based on gold-free grown vertical InAs nanowire arrays. The nanowires are contacted Ohmically in their as-grown locations using an air bridge construction, leaving the nanowire surface free for gas adsorption. Noise measurements were performed to determine the measurement resolution for gas detection. These devices are sensitive to NO(2) concentrations well below 100 ppb at room temperature. NO(2) exposure leads to both a reduction in carrier density and electron mobility.

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Year:  2010        PMID: 20503976     DOI: 10.1021/nl1005405

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  5 in total

1.  Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

Authors:  Yucheng Xiong; Hao Tang; Xiaomeng Wang; Yang Zhao; Qiang Fu; Juekuan Yang; Dongyan Xu
Journal:  Sci Rep       Date:  2017-10-16       Impact factor: 4.379

2.  Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.

Authors:  Alex C Tseng; David Lynall; Igor Savelyev; Marina Blumin; Shiliang Wang; Harry E Ruda
Journal:  Sensors (Basel)       Date:  2017-07-16       Impact factor: 3.576

Review 3.  High-performance electrically transduced hazardous gas sensors based on low-dimensional nanomaterials.

Authors:  Xiaolin Kang; SenPo Yip; You Meng; Wei Wang; Dengji Li; Chuntai Liu; Johnny C Ho
Journal:  Nanoscale Adv       Date:  2021-09-09

4.  Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics.

Authors:  Cheng-Hsiang Kuo; Jyh-Ming Wu; Su-Jien Lin
Journal:  Nanoscale Res Lett       Date:  2013-02-11       Impact factor: 4.703

5.  Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111).

Authors:  Dong Woo Park; Seong Gi Jeon; Cheul-Ro Lee; Sang Jun Lee; Jae Yong Song; Jun Oh Kim; Sam Kyu Noh; Jae-Young Leem; Jin Soo Kim
Journal:  Sci Rep       Date:  2015-11-19       Impact factor: 4.379

  5 in total

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