Literature DB >> 20496870

Improvement of phase stability and accurate determination of optical constants of SnO thin films by using Al2O3 capping layer.

Ling Yan Liang, Zhi Min Liu, Hong Tao Cao, Yuan Yuan Shi, Xi Lian Sun, Zheng Yu, Ai Hua Chen, Hai Zhong Zhang, Yan Qun Fang.   

Abstract

In this letter, it is proposed that the usage of Al(2)O(3) capping layer can tremendously improve the phase stability of SnO thin films, which allows the accurate determination of the optical constants of the SnO films without the perturbation arising from impurity phases. For the SnO films, the refraction index and extinction coefficient are significantly influenced by the crystallinity. The nondirect optical bandgap of the amorphous SnO films is determined to be 2.27 eV, whereas two nondirect optical transitions are observed in the polycrystalline SnO films and the corresponding gap energies are estimated to be 0.50 and 2.45 eV, respectively.

Entities:  

Year:  2010        PMID: 20496870     DOI: 10.1021/am100236s

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

Review 1.  Research Progress of p-Type Oxide Thin-Film Transistors.

Authors:  Zhuping Ouyang; Wanxia Wang; Mingjiang Dai; Baicheng Zhang; Jianhong Gong; Mingchen Li; Lihao Qin; Hui Sun
Journal:  Materials (Basel)       Date:  2022-07-08       Impact factor: 3.748

  1 in total

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