Literature DB >> 20437509

Rewritable switching of one diode-one resistor nonvolatile organic memory devices.

Byungjin Cho1, Tae-Wook Kim, Sunghoon Song, Yongsung Ji, Minseok Jo, Hyunsang Hwang, Gun-Young Jung, Takhee Lee.   

Abstract

Mesh：

Year:  2010        PMID： 20437509     DOI： 10.1002/adma.200903203

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  7 in total

1.  Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory.

Authors:  Xiaobing Yan; Hua Hao; Yingfang Chen; Shoushan Shi; Erpeng Zhang; Jianzhong Lou; Baoting Liu
Journal:  Nanoscale Res Lett       Date:  2014-10-02       Impact factor: 4.703

2.  Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.

Authors:  Yanmei Sun; Dianzhong Wen; Xuduo Bai; Junguo Lu; Chunpeng Ai
Journal:  Sci Rep       Date:  2017-06-21       Impact factor: 4.379

3.  Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway.

Authors:  Zizhu Yao; Liang Pan; Lizhen Liu; Jindan Zhang; Quanjie Lin; Yingxiang Ye; Zhangjing Zhang; Shengchang Xiang; Banglin Chen
Journal:  Sci Adv       Date:  2019-08-02       Impact factor: 14.136

4.  Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications.

Authors:  Matthew J Griffith; Nathan A Cooling; Daniel C Elkington; Michael Wasson; Xiaojing Zhou; Warwick J Belcher; Paul C Dastoor
Journal:  Nanomaterials (Basel)       Date:  2021-04-30       Impact factor: 5.076

5.  Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping.

Authors:  Hang Lu; Yingying Chen; Qing Chang; Shuai Cheng; Yamei Ding; Jie Chen; Fei Xiu; Xiangjing Wang; Chaoyi Ban; Zhengdong Liu; Juqing Liu; Wei Huang
Journal:  RSC Adv       Date:  2018-04-16       Impact factor: 3.361

6.  Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Authors:  Yao-Feng Chang; Burt Fowler; Ying-Chen Chen; Fei Zhou; Chih-Hung Pan; Ting-Chang Chang; Jack C Lee
Journal:  Sci Rep       Date:  2016-02-16       Impact factor: 4.379

7.  Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocomposites.

Authors:  Sihyun Sung; Chaoxing Wu; Hyun Soo Jung; Tae Whan Kim
Journal:  Sci Rep       Date:  2018-08-13       Impact factor: 4.379
  7 in total

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