Literature DB >> 20437479

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.

Sunho Jeong1, Young-Geun Ha, Jooho Moon, Antonio Facchetti, Tobin J Marks.   

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Year:  2010        PMID： 20437479     DOI： 10.1002/adma.200902450

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  25 in total

1.  Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing.

Authors:  Myung-Gil Kim; Mercouri G Kanatzidis; Antonio Facchetti; Tobin J Marks
Journal:  Nat Mater       Date:  2011-04-17       Impact factor: 43.841

2.  Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.

Authors:  Yong-Hoon Kim; Jae-Sang Heo; Tae-Hyeong Kim; Sungjun Park; Myung-Han Yoon; Jiwan Kim; Min Suk Oh; Gi-Ra Yi; Yong-Young Noh; Sung Kyu Park
Journal:  Nature       Date:  2012-09-06       Impact factor: 49.962

3.  Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors.

Authors:  Yao Yao; Wei Huang; Jianhua Chen; Gang Wang; Hongming Chen; Xinming Zhuang; Yibin Ying; Jianfeng Ping; Tobin J Marks; Antonio Facchetti
Journal:  Proc Natl Acad Sci U S A       Date:  2021-11-02       Impact factor: 11.205

4.  Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

Authors:  Jin-Suk Seo; Jun-Hyuck Jeon; Young Hwan Hwang; Hyungjin Park; Minki Ryu; Sang-Hee Ko Park; Byeong-Soo Bae
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

5.  Nano-imprinting of refractive-index-matched indium tin oxide sol-gel in light-emitting diodes for eliminating total internal reflection.

Authors:  Sungjoo Kim; Chul Jong Yoo; Jae Yong Park; Sangwon Baek; Won Seok Cho; Jong-Lam Lee
Journal:  RSC Adv       Date:  2018-11-01       Impact factor: 4.036

6.  Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

Authors:  Josephine Socratous; Kulbinder K Banger; Yana Vaynzof; Aditya Sadhanala; Adam D Brown; Alessandro Sepe; Ullrich Steiner; Henning Sirringhaus
Journal:  Adv Funct Mater       Date:  2015-02-18       Impact factor: 18.808

7.  Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement.

Authors:  Hock Beng Lee; Riski Titian Ginting; Sin Tee Tan; Chun Hui Tan; Abdelelah Alshanableh; Hind Fadhil Oleiwi; Chi Chin Yap; Mohd Hafizuddin Hj Jumali; Muhammad Yahaya
Journal:  Sci Rep       Date:  2016-09-02       Impact factor: 4.379

8.  Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

Authors:  Jun Young Choi; Keun Heo; Kyung-Sang Cho; Sung Woo Hwang; Sangsig Kim; Sang Yeol Lee
Journal:  Sci Rep       Date:  2016-11-04       Impact factor: 4.379

9.  Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors.

Authors:  Adam M Weidling; Vikram S Turkani; Bing Luo; Kurt A Schroder; Sarah L Swisher
Journal:  ACS Omega       Date:  2021-06-25

10.  High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

Authors:  Rui Zhang; Kuan-Chang Chang; Ting-Chang Chang; Tsung-Ming Tsai; Kai-Huang Chen; Jen-Chung Lou; Jung-Hui Chen; Tai-Fa Young; Chih-Cheng Shih; Ya-Liang Yang; Yin-Chih Pan; Tian-Jian Chu; Syuan-Yong Huang; Chih-Hung Pan; Yu-Ting Su; Yong-En Syu; Simon M Sze
Journal:  Nanoscale Res Lett       Date:  2013-11-21       Impact factor: 4.703
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