Compressive stress effect on the radial elastic modulus of oxidized Si nanowires.

Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their diameter. From contact-resonance atomic force microscopy measurements, the effect of the compressive stress at the Si-SiO(2) interface was revealed in the diameter dependence of the elastic modulus of Si nanowires oxidized at 900 and 1000 degrees C. A modified core-shell model that includes the interface stress developed during oxidation captures the diameter dependence observed in the measured elastic moduli of these oxidized Si nanowires. The values of strain and stress as well as the width of the stressed transition region at the Si-SiO(2) interface agree with those reported in simulations and experiments.