Literature DB >> 20423079

Resistive-switching memory effects of NiO nanowire/metal junctions.

Keisuke Oka1, Takeshi Yanagida, Kazuki Nagashima, Tomoji Kawai, Jin-Soo Kim, Bae Ho Park.   

Abstract

We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

Entities:  

Year:  2010        PMID： 20423079     DOI： 10.1021/ja101742f

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN： 0002-7863            Impact factor:   15.419


  7 in total

1.  Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

Authors:  Chi-Hsin Huang; Ta-Shun Chou; Jian-Shiou Huang; Shih-Ming Lin; Yu-Lun Chueh
Journal:  Sci Rep       Date:  2017-05-18       Impact factor: 4.379

2.  Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.

Authors:  Ming Xiao; Kevin P Musselman; Walter W Duley; Norman Y Zhou
Journal:  Nanomicro Lett       Date:  2016-11-21

3.  Synthesis of NiO Nanotubes via a Dynamic Thermal Oxidation Process.

Authors:  Wenfeng Xiang; Zibin Dong; Yi Luo; Jiali Zhao; Jia-Ou Wang; Kurash Ibrahim; Haihong Zhan; Wenzheng Yue; Haizhong Guo
Journal:  Materials (Basel)       Date:  2019-03-08       Impact factor: 3.623

4.  Scaling effect on unipolar and bipolar resistive switching of metal oxides.

Authors:  Takeshi Yanagida; Kazuki Nagashima; Keisuke Oka; Masaki Kanai; Annop Klamchuen; Bae Ho Park; Tomoji Kawai
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

5.  Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

Authors:  Adnan Younis; Dewei Chu; Sean Li
Journal:  Sci Rep       Date:  2015-09-01       Impact factor: 4.379

6.  Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states.

Authors:  Baochang Cheng; Zhiyong Ouyang; Chuan Chen; Yanhe Xiao; Shuijin Lei
Journal:  Sci Rep       Date:  2013-11-19       Impact factor: 4.379

7.  An efficient methodology for measurement of the average electrical properties of single one-dimensional NiO nanorods.

Authors:  Ranjit A Patil; Rupesh S Devan; Jin-Han Lin; Yung Liou; Yuan-Ron Ma
Journal:  Sci Rep       Date:  2013-10-29       Impact factor: 4.379
  7 in total

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