Literature DB >> 20397734

Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

Michael K Yakes1, Daniel Gunlycke, Joseph L Tedesco, Paul M Campbell, Rachael L Myers-Ward, Charles R Eddy, D Kurt Gaskill, Paul E Sheehan, Arnaldo R Laracuente.   

Abstract

We present the first microscopic transport study of epitaxial graphene on SiC using an ultrahigh vacuum four-probe scanning tunneling microscope. Anisotropic conductivity is observed that is caused by the interaction between the graphene and the underlying substrate. These results can be explained by a model where charge buildup at the step edges leads to local scattering of charge carriers. This highlights the importance of considering substrate effects in proposed devices that utilize nanoscale patterning of graphene on electrically isolated substrates.

Entities:  

Mesh:

Substances:

Year:  2010        PMID: 20397734     DOI: 10.1021/nl9035302

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  5 in total

1.  Atomic-scale transport in epitaxial graphene.

Authors:  Shuai-Hua Ji; J B Hannon; R M Tromp; V Perebeinos; J Tersoff; F M Ross
Journal:  Nat Mater       Date:  2011-11-20       Impact factor: 43.841

2.  Epitaxial graphene quantum dots for high-performance terahertz bolometers.

Authors:  Abdel El Fatimy; Rachael L Myers-Ward; Anthony K Boyd; Kevin M Daniels; D Kurt Gaskill; Paola Barbara
Journal:  Nat Nanotechnol       Date:  2016-01-04       Impact factor: 39.213

3.  Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices.

Authors:  Yanfei Yang; Guangjun Cheng; Patrick Mende; Irene G Calizo; Randall M Feenstra; Chiashain Chuang; Chieh-Wen Liu; Chieh-I Liu; George R Jones; Angela R Hight Walker; Randolph E Elmquist
Journal:  Carbon N Y       Date:  2016-12-30       Impact factor: 9.594

4.  Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene.

Authors:  Sang-Hoon Bae; Xiaodong Zhou; Seyoung Kim; Yun Seog Lee; Samuel S Cruz; Yunjo Kim; James B Hannon; Yang Yang; Devendra K Sadana; Frances M Ross; Hongsik Park; Jeehwan Kim
Journal:  Proc Natl Acad Sci U S A       Date:  2017-04-03       Impact factor: 11.205

5.  High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

Authors:  E Pallecchi; F Lafont; V Cavaliere; F Schopfer; D Mailly; W Poirier; A Ouerghi
Journal:  Sci Rep       Date:  2014-04-02       Impact factor: 4.379

  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.