Literature DB >> 20397627

Real-time in situ HRTEM-resolved resistance switching of Ag2S nanoscale ionic conductor.

Zhi Xu1, Yoshio Bando, Wenlong Wang, Xuedong Bai, Dmitri Golberg.   

Abstract

The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte. However, direct evidence of such pathway existence and their formations has never been provided. Herein, we reproduced the switching behavior of a Ag/Ag(2)S/W sandwich structure inside a high-resolution transmission electron microscope equipped with a scanning tunneling microscope unit. The on/off current ratio of 5 orders of magnitude was documented. The in situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution. We found that a conducting Ag(2)S argentite phase and a Ag nanocrystal together formed the ionic and electronic conductive channel. The preferential atomic sites for Ag nanocrystal growth within the argentite phase were finally clarified.

Entities:  

Year:  2010        PMID: 20397627     DOI: 10.1021/nn100483a

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  20 in total

1.  Observation of conducting filament growth in nanoscale resistive memories.

Authors:  Yuchao Yang; Peng Gao; Siddharth Gaba; Ting Chang; Xiaoqing Pan; Wei Lu
Journal:  Nat Commun       Date:  2012-03-13       Impact factor: 14.919

2.  Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.

Authors:  Takeo Ohno; Tsuyoshi Hasegawa; Tohru Tsuruoka; Kazuya Terabe; James K Gimzewski; Masakazu Aono
Journal:  Nat Mater       Date:  2011-06-26       Impact factor: 43.841

3.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.

Authors:  Zhongrui Wang; Saumil Joshi; Sergey E Savel'ev; Hao Jiang; Rivu Midya; Peng Lin; Miao Hu; Ning Ge; John Paul Strachan; Zhiyong Li; Qing Wu; Mark Barnell; Geng-Lin Li; Huolin L Xin; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Mater       Date:  2016-09-26       Impact factor: 43.841

4.  Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

Authors:  Rajeswar Panja; Sourav Roy; Debanjan Jana; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2014-12-23       Impact factor: 4.703

5.  Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Authors:  Agnes Gubicza; Dávid Zs Manrique; László Pósa; Colin J Lambert; György Mihály; Miklós Csontos; András Halbritter
Journal:  Sci Rep       Date:  2016-08-04       Impact factor: 4.379

6.  Neuromorphic atomic switch networks.

Authors:  Audrius V Avizienis; Henry O Sillin; Cristina Martin-Olmos; Hsien Hang Shieh; Masakazu Aono; Adam Z Stieg; James K Gimzewski
Journal:  PLoS One       Date:  2012-08-06       Impact factor: 3.240

7.  Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure.

Authors:  Debanjan Jana; Somsubhra Chakrabarti; Sheikh Ziaur Rahaman; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2015-10-07       Impact factor: 4.703

8.  TaOx-based resistive switching memories: prospective and challenges.

Authors:  Amit Prakash; Debanjan Jana; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2013-10-09       Impact factor: 4.703

9.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

10.  The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector.

Authors:  Chaorong Zhong; Ruijuan Qi; Yonghui Zheng; Yan Cheng; Wenxiong Song; Rong Huang
Journal:  Micromachines (Basel)       Date:  2020-06-12       Impact factor: 2.891

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