Literature DB >> 20392107

Hole-induced electron transport through core-shell quantum dots: a direct measurement of the electron-hole interaction.

Ingmar Swart1, Zhixiang Sun, Daniël Vanmaekelbergh, Peter Liljeroth.   

Abstract

Quantum dots (QDs) have promising optoelectronic properties. Colloidal QD heterostructures, systems in which two semiconductors are incorporated in a single colloid, may show novel and potentially useful transport phenomena. Here, we report on the physical mechanisms of charge transport through PbSe-CdSe core-shell QDs measured with cryogenic scanning tunneling spectroscopy. Compared to single-component QDs, an additional hole-induced electron tunneling channel is found. Electron tunneling with and without a hole occurs at different bias, allowing the determination of the electron-hole interaction energy (80 meV). This energy is sufficiently large to allow for a transport regime at room temperature in which electrons tunnel into the dot only if a hole is present, an ideal situation for controlled single-photon emission.

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Year:  2010        PMID: 20392107     DOI: 10.1021/nl100949a

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films.

Authors:  C S Suchand Sandeep; Sybren ten Cate; Juleon M Schins; Tom J Savenije; Yao Liu; Matt Law; Sachin Kinge; Arjan J Houtepen; Laurens D A Siebbeles
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

  1 in total

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