| Literature DB >> 20389523 |
Qing Fang1, Tsung-Yang Liow, Jun Feng Song, Kah Wee Ang, Ming Bin Yu, Guo Qiang Lo, Dim-Lee Kwong.
Abstract
A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 x 10(-11), the WDM receiver showed an optical input sensitivity between -16 dBm and -19 dBm.Entities:
Year: 2010 PMID: 20389523 DOI: 10.1364/OE.18.005106
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894