| Literature DB >> 20389510 |
Solomon Assefa1, Fengnian Xia, Stephen W Bedell, Ying Zhang, Teya Topuria, Philip M Rice, Yurii A Vlasov.
Abstract
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.Year: 2010 PMID： 20389510 DOI： 10.1364/OE.18.004986
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894