Literature DB >> 20366844

Symmetry breaking in the zero-energy Landau level in bilayer graphene.

Y Zhao1, P Cadden-Zimansky, Z Jiang, P Kim.   

Abstract

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high-field regime, the eightfold degeneracy in the zero-energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding to filling factors nu=0, 1, 2, and 3. Measurements of the activation energy gaps for the nu=2 and 3 filling factors in tilted magnetic fields exhibit no appreciable dependence on the in-plane magnetic field, suggesting that these Landau level splittings are independent of spin. In addition, measurements taken at the nu=0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.

Entities:  

Year:  2010        PMID: 20366844     DOI: 10.1103/PhysRevLett.104.066801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  11 in total

1.  Transport spectroscopy of symmetry-broken insulating states in bilayer graphene.

Authors:  J Velasco; L Jing; W Bao; Y Lee; P Kratz; V Aji; M Bockrath; C N Lau; C Varma; R Stillwell; D Smirnov; Fan Zhang; J Jung; A H MacDonald
Journal:  Nat Nanotechnol       Date:  2012-01-22       Impact factor: 39.213

2.  Evidence for a spontaneous gapped state in ultraclean bilayer graphene.

Authors:  Wenzhong Bao; Jairo Velasco; Fan Zhang; Lei Jing; Brian Standley; Dmitry Smirnov; Marc Bockrath; Allan H MacDonald; Chun Ning Lau
Journal:  Proc Natl Acad Sci U S A       Date:  2012-06-08       Impact factor: 11.205

3.  Gate-defined quantum confinement in suspended bilayer graphene.

Authors:  M T Allen; J Martin; A Yacoby
Journal:  Nat Commun       Date:  2012-07-03       Impact factor: 14.919

4.  Large intrinsic energy bandgaps in annealed nanotube-derived graphene nanoribbons.

Authors:  T Shimizu; J Haruyama; D C Marcano; D V Kosinkin; J M Tour; K Hirose; K Suenaga
Journal:  Nat Nanotechnol       Date:  2010-12-19       Impact factor: 39.213

5.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

6.  Valley- and spin-polarized Landau levels in monolayer WSe2.

Authors:  Zefang Wang; Jie Shan; Kin Fai Mak
Journal:  Nat Nanotechnol       Date:  2016-10-31       Impact factor: 39.213

7.  Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene.

Authors:  B M Hunt; J I A Li; A A Zibrov; L Wang; T Taniguchi; K Watanabe; J Hone; C R Dean; M Zaletel; R C Ashoori; A F Young
Journal:  Nat Commun       Date:  2017-10-16       Impact factor: 14.919

8.  Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene.

Authors:  Biswajit Datta; Santanu Dey; Abhisek Samanta; Hitesh Agarwal; Abhinandan Borah; Kenji Watanabe; Takashi Taniguchi; Rajdeep Sensarma; Mandar M Deshmukh
Journal:  Nat Commun       Date:  2017-02-20       Impact factor: 14.919

9.  Layer anti-ferromagnetism on bilayer honeycomb lattice.

Authors:  Hong-Shuai Tao; Yao-Hua Chen; Heng-Fu Lin; Hai-Di Liu; Wu-Ming Liu
Journal:  Sci Rep       Date:  2014-06-20       Impact factor: 4.379

10.  Metal-to-insulator switching in quantum anomalous Hall states.

Authors:  Xufeng Kou; Lei Pan; Jing Wang; Yabin Fan; Eun Sang Choi; Wei-Li Lee; Tianxiao Nie; Koichi Murata; Qiming Shao; Shou-Cheng Zhang; Kang L Wang
Journal:  Nat Commun       Date:  2015-10-07       Impact factor: 14.919

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