Literature DB >> 20366781

Anomalous Hanle effect due to optically created transverse overhauser field in single InAs/GaAs quantum dots.

O Krebs1, P Maletinsky, T Amand, B Urbaszek, A Lemaître, P Voisin, X Marie, A Imamoglu.   

Abstract

We report on experimental observations of an anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots. A sizable electron spin polarization photocreated under constant illumination is maintained in transverse magnetic fields as high as approximately 1 T, up to a critical field where it abruptly collapses. These striking anomalies of the Hanle curve point to a novel mechanism of dynamic nuclear spin polarization giving rise to an effective magnetic field generated perpendicular to the optically injected electron spin polarization. This transverse Overhauser field, confirmed by the cancellation of electron Zeeman splitting below the critical field, is likely to be a consequence of the strong inhomogeneous quadrupolar interactions typical for strained quantum dots.

Entities:  

Year:  2010        PMID: 20366781     DOI: 10.1103/PhysRevLett.104.056603

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Nuclear spin effects in semiconductor quantum dots.

Authors:  E A Chekhovich; M N Makhonin; A I Tartakovskii; A Yacoby; H Bluhm; K C Nowack; L M K Vandersypen
Journal:  Nat Mater       Date:  2013-06       Impact factor: 43.841

2.  Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field.

Authors:  G Sallen; S Kunz; T Amand; L Bouet; T Kuroda; T Mano; D Paget; O Krebs; X Marie; K Sakoda; B Urbaszek
Journal:  Nat Commun       Date:  2014       Impact factor: 14.919

3.  Hyperfine interaction in atomically thin transition metal dichalcogenides.

Authors:  Ivan D Avdeev; Dmitry S Smirnov
Journal:  Nanoscale Adv       Date:  2019-05-13
  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.