Literature DB >> 20365937

Nature of atomic bonding and atomic structure in the phase-change Ge2Sb2Te5 glass.

M Xu1, Y Q Cheng, H W Sheng, E Ma.   

Abstract

Using electronic structure calculations, we demonstrate a global valence alternation in the amorphous Ge2Sb2Te5, a prototype phase-change alloy for data storage. The resulting p bonding profoundly influences the local atomic structure, leading to right-angle components similar to those in the crystalline counterpart of this chalcogenide glass. The dominance of p bonding is revealed by (i) distributions of the coordination number (CN) and the bond angle, for truly bonded atoms determined based on the electron localization function, and (ii) a direct evaluation of the p (and s) orbital occupation probability for the CN=3 Ge atoms that form 90 degree bonds with neighbors.

Entities:  

Year:  2009        PMID: 20365937     DOI: 10.1103/PhysRevLett.103.195502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Authors:  M Xu; Y Q Cheng; L Wang; H W Sheng; Y Meng; W G Yang; X D Han; E Ma
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-16       Impact factor: 11.205

2.  Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires.

Authors:  Brian Piccione; Rahul Agarwal; Yeonwoong Jung; Ritesh Agarwal
Journal:  Philos Mag (Abingdon)       Date:  2013       Impact factor: 1.864

3.  Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Authors:  Zhimei Sun; Jian Zhou; Yuanchun Pan; Zhitang Song; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-13       Impact factor: 11.205

4.  Disorder Control in Crystalline GeSb2Te4 Using High Pressure.

Authors:  Ming Xu; Wei Zhang; Riccardo Mazzarello; Matthias Wuttig
Journal:  Adv Sci (Weinh)       Date:  2015-06-30       Impact factor: 16.806

5.  Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5.

Authors:  Konstantinos Konstantinou; Felix C Mocanu; Tae-Hoon Lee; Stephen R Elliott
Journal:  Nat Commun       Date:  2019-07-11       Impact factor: 14.919

6.  Mass spectrometric investigation of amorphous Ga-Sb-Se thin films.

Authors:  Ravi Mawale; Tomáš Halenkovič; Marek Bouška; Jan Gutwirth; Virginie Nazabal; Pankaj Lochan Bora; Lukáš Pečinka; Lubomír Prokeš; Josef Havel; Petr Němec
Journal:  Sci Rep       Date:  2019-07-15       Impact factor: 4.379

7.  Understanding Phase-Change Memory Alloys from a Chemical Perspective.

Authors:  A V Kolobov; P Fons; J Tominaga
Journal:  Sci Rep       Date:  2015-09-01       Impact factor: 4.379

  7 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.