Literature DB >> 20356256

Bias-stress-stable solution-processed oxide thin film transistors.

Youngmin Jeong, Changdeuck Bae, Dongjo Kim, Keunkyu Song, Kyoohee Woo, Hyunjung Shin, Guozhong Cao, Jooho Moon.   

Abstract

Year:  2010        PMID： 20356256     DOI： 10.1021/am900787k

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN： 1944-8244            Impact factor:   9.229


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  5 in total

1.  Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors.

Authors:  Jun Young Choi; Keun Heo; Kyung-Sang Cho; Sung Woo Hwang; JaeGwan Chung; Sangsig Kim; Byeong Hyeon Lee; Sang Yeol Lee
Journal:  Sci Rep       Date:  2017-11-13       Impact factor: 4.379

2.  Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors.

Authors:  Yanyu Yuan; Cong Peng; Shibo Yang; Meng Xu; Jiayu Feng; Xifeng Li; Jianhua Zhang
Journal:  RSC Adv       Date:  2020-07-28       Impact factor: 4.036

3.  Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method.

Authors:  Xiang Yang; Shu Jiang; Jun Li; Jian-Hua Zhang; Xi-Feng Li
Journal:  RSC Adv       Date:  2018-06-07       Impact factor: 4.036

4.  Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.

Authors:  Ming-Hung Hsu; Sheng-Po Chang; Shoou-Jinn Chang; Wei-Ting Wu; Jyun-Yi Li
Journal:  Nanomaterials (Basel)       Date:  2017-06-26       Impact factor: 5.076

5.  Chemical Reactivity of Supported ZnO Clusters: Undercoordinated Zinc and Oxygen Atoms as Active Sites.

Authors:  Xiaojuan Yu; Jannik P Roth; Junjun Wang; Eric Sauter; Alexei Nefedov; Stefan Heißler; Gianfranco Pacchioni; Yuemin Wang; Christof Wöll
Journal:  Chemphyschem       Date:  2020-11-13       Impact factor: 3.520
  5 in total

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