Literature DB >> 20217730

Impact of defect distribution on resistive switching characteristics of Sr2TiO4 thin films.

Keisuke Shibuya1, Regina Dittmann, Shaobo Mi, Rainer Waser.   

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Year:  2010        PMID： 20217730     DOI： 10.1002/adma.200901493

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  13 in total

1.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.

Authors:  Anja Wedig; Michael Luebben; Deok-Yong Cho; Marco Moors; Katharina Skaja; Vikas Rana; Tsuyoshi Hasegawa; Kiran K Adepalli; Bilge Yildiz; Rainer Waser; Ilia Valov
Journal:  Nat Nanotechnol       Date:  2015-09-28       Impact factor: 39.213

2.  Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells.

Authors:  Xianwen Sun; Guoqiang Li; Li Chen; Zihong Shi; Weifeng Zhang
Journal:  Nanoscale Res Lett       Date:  2011-11-23       Impact factor: 4.703

3.  Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.

Authors:  Evgeny Mikheev; Jinwoo Hwang; Adam P Kajdos; Adam J Hauser; Susanne Stemmer
Journal:  Sci Rep       Date:  2015-06-09       Impact factor: 4.379

4.  Crystallization dynamics and interface stability of strontium titanate thin films on silicon.

Authors:  Florian Hanzig; Juliane Hanzig; Erik Mehner; Carsten Richter; Jozef Veselý; Hartmut Stöcker; Barbara Abendroth; Mykhaylo Motylenko; Volker Klemm; Dmitri Novikov; Dirk C Meyer
Journal:  J Appl Crystallogr       Date:  2015-03-12       Impact factor: 3.304

5.  Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.

Authors:  Seungho Cho; Chao Yun; Stefan Tappertzhofen; Ahmed Kursumovic; Shinbuhm Lee; Ping Lu; Quanxi Jia; Meng Fan; Jie Jian; Haiyan Wang; Stephan Hofmann; Judith L MacManus-Driscoll
Journal:  Nat Commun       Date:  2016-08-05       Impact factor: 14.919

6.  Formation mechanism of Ruddlesden-Popper-type antiphase boundaries during the kinetically limited growth of Sr rich SrTiO3 thin films.

Authors:  Chencheng Xu; Hongchu Du; Alexander J H van der Torren; Jan Aarts; Chun-Lin Jia; Regina Dittmann
Journal:  Sci Rep       Date:  2016-12-06       Impact factor: 4.379

7.  Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

Authors:  Xiang Yang; I-Wei Chen
Journal:  Sci Rep       Date:  2012-10-17       Impact factor: 4.379

8.  Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.

Authors:  Hsin-Wei Huang; Chen-Fang Kang; Fang-I Lai; Jr-Hau He; Su-Jien Lin; Yu-Lun Chueh
Journal:  Nanoscale Res Lett       Date:  2013-11-16       Impact factor: 4.703

9.  Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process.

Authors:  Yongcheol Jo; Kyooho Jung; Jongmin Kim; Hyeonseok Woo; Jaeseok Han; Hyungsang Kim; Jinpyo Hong; Jeon-Kook Lee; Hyunsik Im
Journal:  Sci Rep       Date:  2014-12-08       Impact factor: 4.379

10.  Stochastic switching of TiO2-based memristive devices with identical initial memory states.

Authors:  Qingjiang Li; Ali Khiat; Iulia Salaoru; Hui Xu; Themistoklis Prodromakis
Journal:  Nanoscale Res Lett       Date:  2014-06-10       Impact factor: 4.703
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