Literature DB >> 20208109

The fabrication of a programmable via using phase-change material in CMOS-compatible technology.

Kuan-Neng Chen1, Lia Krusin-Elbaum.   

Abstract

We demonstrate an energy-efficient programmable via concept using indirectly heated phase-change material. This via structure has maximum phase-change volume to achieve a minimum on resistance for high performance logic applications. Process development and material investigations for this device structure are reported. The device concept is successfully demonstrated in a standard CMOS-compatible technology capable of multiple cycles between on/off states for reconfigurable applications.

Year:  2010        PMID: 20208109     DOI: 10.1088/0957-4484/21/13/134001

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Interfacial phase-change memory.

Authors:  R E Simpson; P Fons; A V Kolobov; T Fukaya; M Krbal; T Yagi; J Tominaga
Journal:  Nat Nanotechnol       Date:  2011-07-03       Impact factor: 39.213

  1 in total

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