| Literature DB >> 20205446 |
N Akopian1, G Patriarche, L Liu, J-C Harmand, V Zwiller.
Abstract
In semiconducting nanowires, both zinc blende and wurtzite crystal structures can coexist. The band structure difference between the two structures can lead to charge confinement. Here we fabricate and study single quantum dot devices defined solely by crystal phase in a chemically homogeneous nanowire and observe single photon generation. More generally, our results show that this type of carrier confinement represents a novel degree of freedom in device design at the nanoscale.Entities:
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Year: 2010 PMID: 20205446 DOI: 10.1021/nl903534n
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189