Literature DB >> 20203621

Memory grows up.

Agostino Pirovano, Klaus Schuegraf.   

Abstract

Year:  2010        PMID： 20203621     DOI： 10.1038/nnano.2010.36

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN： 1748-3387            Impact factor:   39.213


× No keyword cloud information.
  1 in total

1.  Phase-change materials for rewriteable data storage.

Authors:  Matthias Wuttig; Noboru Yamada
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841
  1 in total
  4 in total

1.  Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory.

Authors:  Sweety Deswal; Rupali R Malode; Ashok Kumar; Ajeet Kumar
Journal:  RSC Adv       Date:  2019-03-25       Impact factor: 4.036

2.  Metal oxide-resistive memory using graphene-edge electrodes.

Authors:  Seunghyun Lee; Joon Sohn; Zizhen Jiang; Hong-Yu Chen; H-S Philip Wong
Journal:  Nat Commun       Date:  2015-09-25       Impact factor: 14.919

3.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

4.  Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

Authors:  Sungjun Kim; Byung-Gook Park
Journal:  Nanoscale Res Lett       Date:  2016-08-12       Impact factor: 4.703
  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.