| Literature DB >> 20199032 |
Alexander Pevzner1, Yoni Engel, Roey Elnathan, Tamir Ducobni, Moshit Ben-Ishai, Koteeswara Reddy, Nava Shpaisman, Alexander Tsukernik, Mark Oksman, Fernando Patolsky.
Abstract
The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm(2).Mesh:
Substances:
Year: 2010 PMID: 20199032 DOI: 10.1021/nl903560u
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189