| Literature DB >> 20174051 |
O Jambois1, F Gourbilleau, A J Kenyon, J Montserrat, R Rizk, B Garrido.
Abstract
This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10(-2)%. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.Entities:
Year: 2010 PMID: 20174051 DOI: 10.1364/OE.18.002230
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894