Literature DB >> 20173955

Ligand capping effect for dye solar cells with a CdSe quantum dot sensitized ZnO nanorod photoanode.

Xiao Wei Sun1, Jing Chen, Jun Ling Song, De Wei Zhao, Wei Qiao Deng, Wei Lei.   

Abstract

We report a quantum dot sensitized solar cell (QDSSC) with a thioglycolic acid (TGA) capped CdSe quantum dot (QD) sensitized ZnO nanorod photoanode. As revealed by UV-Vis absorption spectrum and transmission electron microscopy, the quantum dots can be effectively adsorbed onto ZnO nanorods. By studying the emission decay, the quenching of the CdSe QDs by ZnO nanorod was verified, and an electron transfer (from QD to ZnO) rate constant of 1 x 10(8) s(-1) was obtained. The efficiency of the as-prepared QDSSC was 0.66% and an incident power conversion efficiency of 22% at 400 nm was achieved.

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Year:  2010        PMID: 20173955     DOI: 10.1364/OE.18.001296

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  5 in total

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Authors:  Charmaine Tshangana; Tebello Nyokong
Journal:  J Fluoresc       Date:  2014-12-17       Impact factor: 2.217

2.  Fluorescence Behaviour and Singlet Oxygen Production of Aluminium Phthalocyanine in the Presence of Upconversion Nanoparticles.

Authors:  Zane Watkins; Jessica Taylor; Sarah D'Souza; Jonathan Britton; Tebello Nyokong
Journal:  J Fluoresc       Date:  2015-08-13       Impact factor: 2.217

3.  Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications.

Authors:  Chunyan Luan; Aleksandar Vaneski; Andrei S Susha; Xueqing Xu; Hong-En Wang; Xue Chen; Jun Xu; Wenjun Zhang; Chun-Sing Lee; Andrey L Rogach; Juan Antonio Zapien
Journal:  Nanoscale Res Lett       Date:  2011-04-14       Impact factor: 4.703

4.  Electron relaxation in the CdSe quantum dot--ZnO composite: prospects for photovoltaic applications.

Authors:  Karel Zídek; Mohamed Abdellah; Kaibo Zheng; Tõnu Pullerits
Journal:  Sci Rep       Date:  2014-11-28       Impact factor: 4.379

5.  Highly transparent phototransistor based on quantum-dots and ZnO bilayers for optical logic gate operation in visible-light.

Authors:  Byung Jun Kim; Nam-Kwang Cho; Sungho Park; Shinyoung Jeong; Dohyeon Jeon; Yebin Kang; Taekyeong Kim; Youn Sang Kim; Il Ki Han; Seong Jun Kang
Journal:  RSC Adv       Date:  2020-04-24       Impact factor: 4.036

  5 in total

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