Literature DB >> 20130587

Nanoelectronics: single dopants learn their place.

Sven Rogge.   

Abstract

Mesh：

Year:  2010        PMID： 20130587     DOI： 10.1038/nnano.2010.11

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN： 1748-3387            Impact factor:   39.213


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  5 in total

1.  Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon.

Authors:  A Fuhrer; M Füchsle; T C G Reusch; B Weber; M Y Simmons
Journal:  Nano Lett       Date:  2009-02       Impact factor: 11.189

2.  Enhanced donor binding energy close to a semiconductor surface.

Authors:  A P Wijnheijmer; J K Garleff; K Teichmann; M Wenderoth; S Loth; R G Ulbrich; P A Maksym; M Roy; P M Koenraad
Journal:  Phys Rev Lett       Date:  2009-04-21       Impact factor: 9.161

3.  Single-donor ionization energies in a nanoscale CMOS channel.

Authors:  M Pierre; R Wacquez; X Jehl; M Sanquer; M Vinet; O Cueto
Journal:  Nat Nanotechnol       Date:  2009-12-06       Impact factor: 39.213

4.  Atomic-scale desorption through electronic and vibrational excitation mechanisms.

Authors:  T C Shen; C Wang; G C Abeln; J R Tucker; J W Lyding; P Avouris; R E Walkup
Journal:  Science       Date:  1995-06-16       Impact factor: 47.728

5.  Donor deactivation in silicon nanostructures.

Authors:  Mikael T Björk; Heinz Schmid; Joachim Knoch; Heike Riel; Walter Riess
Journal:  Nat Nanotechnol       Date:  2009-01-11       Impact factor: 39.213
  5 in total
  1 in total

1.  Perfectly imperfect.

Authors: 
Journal:  Nat Nanotechnol       Date:  2010-05       Impact factor: 39.213
  1 in total

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