| Literature DB >> 20113142 |
Peter C K Vesborg1, Jakob L Olsen, Toke R Henriksen, Ib Chorkendorff, Ole Hansen.
Abstract
Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling heat-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature.Entities:
Year: 2010 PMID: 20113142 DOI: 10.1063/1.3277117
Source DB: PubMed Journal: Rev Sci Instrum ISSN: 0034-6748 Impact factor: 1.523