Literature DB >> 20113110

In situ impedance measurements in diamond anvil cell under high pressure.

Yue Wang1, Yonghao Han, Chunxiao Gao, Yanzhang Ma, Cailong Liu, Gang Peng, Baojia Wu, Bao Liu, Tingjing Hu, Xiaoyan Cui, Wanbin Ren, Yan Li, Ningning Su, Hongwu Liu, Guangtian Zou.   

Abstract

Two-electrode configuration was developed for in situ electrical impedance detecting on diamond anvil cell under high pressure. The metal gasket was used as one electrode and the risk coming from electrical short between sample and interside wall of the gasket was eliminated. The configuration was evaluated and proved to be effective by measuring the electric impedance of nanocrystalline ZnS under high pressure.

Entities:  

Year:  2010        PMID: 20113110     DOI: 10.1063/1.3282444

Source DB:  PubMed          Journal:  Rev Sci Instrum        ISSN: 0034-6748            Impact factor:   1.523


  2 in total

1.  Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface.

Authors:  Haiwa Zhang; Feng Ke; Yan Li; Li Wang; Cailong Liu; Yi Zeng; Mingguang Yao; Yonghao Han; Yanzhang Ma; Chunxiao Gao
Journal:  Sci Rep       Date:  2015-09-24       Impact factor: 4.379

2.  Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO 2.

Authors:  Wenshu Shen; Tianji Ou; Jia Wang; Tianru Qin; Guozhao Zhang; Xin Zhang; Yonghao Han; Yanzhang Ma; Chunxiao Gao
Journal:  Sci Rep       Date:  2018-03-23       Impact factor: 4.379

  2 in total

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