Literature DB >> 20090196

352 nm ultraviolet emission from high-quality crystalline AlN whiskers.

Baodan Liu1, Yoshio Bando, Aimin Wu, Xin Jiang, Benjamin Dierre, Takashi Sekiguchi, Chengchun Tang, Masanori Mitome, Dmitri Golberg.   

Abstract

High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at approximately 352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.

Entities:  

Year:  2010        PMID: 20090196     DOI: 10.1088/0957-4484/21/7/075708

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Local analysis of Eu2+ emission in CaAlSiN3.

Authors:  Benjamin Dierre; Takashi Takeda; Takashi Sekiguchi; Takayuki Suehiro; Kohsei Takahashi; Yoshinobu Yamamoto; Rong-Jun Xie; Naoto Hirosaki
Journal:  Sci Technol Adv Mater       Date:  2013-11-07       Impact factor: 8.090

  1 in total

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