| Literature DB >> 20057957 |
Yi-Hung Liu1, Chi-Kai Wang1, Yung Ting1, Wei-Zhi Lin1, Zhi-Hao Kang1, Ching-Shun Chen2, Jih-Shang Hwang3.
Abstract
Defect inspection plays a critical role in thin film transistor liquid crystal display (TFT-LCD) manufacture, and has received much attention in the field of automatic optical inspection (AOI). Previously, most focus was put on the problems of macro-scale Mura-defect detection in cell process, but it has recently been found that the defects which substantially influence the yield rate of LCD panels are actually those in the TFT array process, which is the first process in TFT-LCD manufacturing. Defect inspection in TFT array process is therefore considered a difficult task. This paper presents a novel inspection scheme based on kernel principal component analysis (KPCA) algorithm, which is a nonlinear version of the well-known PCA algorithm. The inspection scheme can not only detect the defects from the images captured from the surface of LCD panels, but also recognize the types of the detected defects automatically. Results, based on real images provided by a LCD manufacturer in Taiwan, indicate that the KPCA-based defect inspection scheme is able to achieve a defect detection rate of over 99% and a high defect classification rate of over 96% when the imbalanced support vector machine (ISVM) with 2-norm soft margin is employed as the classifier. More importantly, the inspection time is less than 1 s per input image.Entities:
Keywords: TFT array process; automatic optical inspection; defect inspection; kernel principal component analysis; support vector machine; thin film transistor liquid crystal display
Mesh:
Year: 2009 PMID: 20057957 PMCID: PMC2790120 DOI: 10.3390/ijms10104498
Source DB: PubMed Journal: Int J Mol Sci ISSN: 1422-0067 Impact factor: 6.208
Figure 1.An example of normal GE image. A normal GE pattern consists of three parts. The first part is the GE lines, which are the thicker lines appearing in the pattern periodically. The maximum width of a GE line is around 15 micro meters. The second part is the capacity storages (CSs), which are thinner than the GE lines. The third part is the rectangular regions surrounded by GE lines and CSs, called pixel regions (PRs).
Figure 2.The flow chart of the image acquisition process in real GE engineering.
Types of the inline defects in GE engineering and their causes.
| CGC (Connection between GE and CS) | It involves particles left on the thin film before photoresist coating. |
| APC (Abnormal photo resist coating) | APC is caused by the staining of thinner drops on the thin film, which would produce drop-like photoresist holes. APC would make the pattern deformed after exposure. |
| SCR (Scratch) | 1) when the robot arm for carrying glass substrates is biased in its position, substrates would get scratched; 2) when the cassette placing substrates deforms, substrates get scratched. |
| PAR (Particle) | When the panels are carried to the inspection equipment by RGV, particles would fall on the surfaces of the panels. |
Figure 3.Examples of the four types of inline defects.
Figure 4.The flow chart of the inline defect inspection scheme.
Date set used in the experiments.
| # PRs | 88 | 60 | 102 | 680 | 200 | 1130 |
Figure 5.Defective PRs. The PRs in the top row are CGC PRs. The second and the third rows display some APC and SCR PRs, respectively. The PRs in the bottom row are PAR PRs.
Comparison of classification rates (CR) among different feature extraction methods.
| CR (%) | 84.07 | 89.02 | 92.03 |
Comparison of classification rates (CR) among different classification methods.
| CR (%) | 92.03 | 94.69 | 95.40 | 96.28 |
| CR (%) | 84.07 | 93.12 | 94.23 | 94.66 |
2N-ISVM classification results for each class.
| 41 | 1 | 0 | 2 | 0 | |
| 2 | 28 | 0 | 0 | 1 | |
| 0 | 0 | 48 | 8 | 0 | |
| 1 | 0 | 3 | 328 | 0 | |
| 0 | 1 | 0 | 2 | 99 | |