Literature DB >> 20041698

Tunable Kondo effect in a single donor atom.

G P Lansbergen1, G C Tettamanzi, J Verduijn, N Collaert, S Biesemans, M Blaauboer, S Rogge.   

Abstract

The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the "regular" spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2) to an SU(4) configuration.

Entities:  

Year:  2010        PMID: 20041698     DOI: 10.1021/nl9031132

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Spin coupling and relaxation inside molecule-metal contacts.

Authors:  Aitor Mugarza; Cornelius Krull; Roberto Robles; Sebastian Stepanow; Gustavo Ceballos; Pietro Gambardella
Journal:  Nat Commun       Date:  2011-10-04       Impact factor: 14.919

Review 2.  Phase-Coherent Dynamics of Quantum Devices with Local Interactions.

Authors:  Michele Filippone; Arthur Marguerite; Karyn Le Hur; Gwendal Fève; Christophe Mora
Journal:  Entropy (Basel)       Date:  2020-07-31       Impact factor: 2.524

Review 3.  Unusual Quantum Transport Mechanisms in Silicon Nano-Devices.

Authors:  Giuseppe Carlo Tettamanzi
Journal:  Entropy (Basel)       Date:  2019-07-11       Impact factor: 2.524

  3 in total

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