Literature DB >> 20016608

Improved metal-semiconductor position detector with oscillating lateral photovoltaic effect.

Chong Qi Yu1, Hui Wang.   

Abstract

The most outstanding feature of a lateral photovoltaic effect (LPE) is its linear response to the light position. We report an oscillating LPE in a modified metal-semiconductor (MS) structure, in which the lateral photovoltage (LPV) will oscillate with light position. Compared with the linear LPV in that conventional MS structure, this effect shows a controllable oscillation with sharp change with light position, opening a new method of detecting very small displacement with much higher precision and sensitivity.

Entities:  

Year:  2009        PMID: 20016608     DOI: 10.1364/OL.34.003770

Source DB:  PubMed          Journal:  Opt Lett        ISSN: 0146-9592            Impact factor:   3.776


  2 in total

1.  Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures.

Authors:  Chongqi Yu; Hui Wang
Journal:  Sensors (Basel)       Date:  2010-11-11       Impact factor: 3.576

2.  Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures.

Authors:  Peiqi Zhou; Zhikai Gan; Xu Huang; Chunlian Mei; Meizhen Huang; Yuxing Xia; Hui Wang
Journal:  Sci Rep       Date:  2016-08-18       Impact factor: 4.379

  2 in total

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