| Literature DB >> 19997246 |
Huapu Pan1, Zhi Li, Andreas Beling, Joe C Campbell.
Abstract
The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.Entities:
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Year: 2009 PMID： 19997246 DOI： 10.1364/OE.17.020221
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894