| Literature DB >> 19905783 |
D A Tenne1, P Turner, J D Schmidt, M Biegalski, Y L Li, L Q Chen, A Soukiassian, S Trolier-McKinstry, D G Schlom, X X Xi, D D Fong, P H Fuoss, J A Eastman, G B Stephenson, C Thompson, S K Streiffer.
Abstract
We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180 degrees domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.Entities:
Year: 2009 PMID： 19905783 DOI： 10.1103/PhysRevLett.103.177601
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161