Literature DB >> 19905586

Towards Bose-Einstein condensation of semiconductor excitons: the biexciton polarization effect.

D Hägele1, S Pfalz, M Oestreich.   

Abstract

We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells.

Entities:  

Year:  2009        PMID: 19905586     DOI: 10.1103/PhysRevLett.103.146402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires.

Authors:  Brian Piccione; Rahul Agarwal; Yeonwoong Jung; Ritesh Agarwal
Journal:  Philos Mag (Abingdon)       Date:  2013       Impact factor: 1.864

Review 2.  Tailoring light-matter coupling in semiconductor and hybrid-plasmonic nanowires.

Authors:  Brian Piccione; Carlos O Aspetti; Chang-Hee Cho; Ritesh Agarwal
Journal:  Rep Prog Phys       Date:  2014-08-05
  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.