Infrared waveguiding in Si(1-x-y)Ge(x)C(y) upon silicon.

Polarization-independent waveguiding at 1.32 and 1.54 microm was observed in single-crystal S(1-x-y)Ge(x)C(y) grown nearly lattice matched upon Si(100) by chemical vapor deposition. Losses were <5 dB/cm at 1.54 microm. Experiments indicate that the band gap of three SiGeC alloy waveguides was in the 0.93-0.99-eV range, in agreement with theory.