Optical second-harmonic generation induced by a dc electric field at the Si-SiO(2) interface.

For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si-SiO(2) interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate that the MOS technique of dc electric-field application to the Si-SiO(2) interface can be effectively used for studying electroinduced effects on SHG.