Literature DB >> 19792755

All-electrical measurement of the density of states in (Ga,Mn)As.

D Neumaier1, M Turek, U Wurstbauer, A Vogl, M Utz, W Wegscheider, D Weiss.   

Abstract

We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction to an enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows us to deduce the effective density of states of (Ga,Mn)As at the Fermi energy.

Year:  2009        PMID： 19792755     DOI： 10.1103/PhysRevLett.103.087203

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


  4 in total

1.  Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band.

Authors:  M Dobrowolska; K Tivakornsasithorn; X Liu; J K Furdyna; M Berciu; K M Yu; W Walukiewicz
Journal:  Nat Mater       Date:  2012-02-19       Impact factor: 43.841

2.  A ten-year perspective on dilute magnetic semiconductors and oxides.

Authors:  Tomasz Dietl
Journal:  Nat Mater       Date:  2010-11-23       Impact factor: 43.841

3.  Bulk electronic structure of the dilute magnetic semiconductor Ga(1-x)Mn(x)As through hard X-ray angle-resolved photoemission.

Authors:  A X Gray; J Minár; S Ueda; P R Stone; Y Yamashita; J Fujii; J Braun; L Plucinski; C M Schneider; G Panaccione; H Ebert; O D Dubon; K Kobayashi; C S Fadley
Journal:  Nat Mater       Date:  2012-10-14       Impact factor: 43.841

4.  Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.

Authors:  S Souma; L Chen; R Oszwałdowski; T Sato; F Matsukura; T Dietl; H Ohno; T Takahashi
Journal:  Sci Rep       Date:  2016-06-06       Impact factor: 4.379
  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.