Literature DB >> 19792382

Initial structure memory of pressure-induced changes in the phase-change memory alloy Ge2Sb2Te5.

M Krbal1, A V Kolobov, J Haines, P Fons, C Levelut, R Le Parc, M Hanfland, J Tominaga, A Pradel, M Ribes.   

Abstract

We demonstrate that while the metastable face-centered cubic (fcc) phase of Ge2Sb2Te5 becomes amorphous under hydrostatic compression at about 15 GPa, the stable trigonal phase remains crystalline. Upon higher compression, a body-centered cubic phase is obtained in both cases around 30 GPa. Upon decompression, the amorphous phase is retained for the starting fcc phase while the initial structure is recovered for the starting trigonal phase. We argue that the presence of vacancies and associated subsequent large atomic displacements lead to nanoscale phase separation and loss of initial structure memory in the fcc staring phase of Ge2Sb2Te5.

Year:  2009        PMID: 19792382     DOI: 10.1103/PhysRevLett.103.115502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Peierls distortion mediated reversible phase transition in GeTe under pressure.

Authors:  Zhimei Sun; Jian Zhou; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-02       Impact factor: 11.205

2.  Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Authors:  M Xu; Y Q Cheng; L Wang; H W Sheng; Y Meng; W G Yang; X D Han; E Ma
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-16       Impact factor: 11.205

3.  Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Authors:  Zhimei Sun; Jian Zhou; Yuanchun Pan; Zhitang Song; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-13       Impact factor: 11.205

4.  Disorder Control in Crystalline GeSb2Te4 Using High Pressure.

Authors:  Ming Xu; Wei Zhang; Riccardo Mazzarello; Matthias Wuttig
Journal:  Adv Sci (Weinh)       Date:  2015-06-30       Impact factor: 16.806

Review 5.  A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

Authors:  Jiang-Jing Wang; Ya-Zhi Xu; Riccardo Mazzarello; Matthias Wuttig; Wei Zhang
Journal:  Materials (Basel)       Date:  2017-07-27       Impact factor: 3.623

  5 in total

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