| Literature DB >> 19791934 |
J Fox1, R Saini, K Tsui, G Verbeck.
Abstract
Deep-reactive ion etching of n-doped silicon-on-insulator is utilized to make ion optical components to aid in the miniaturization of mass analyzers. The microelectromechanical system components are bound to aluminum nitride substrates and employed three-dimensional assembly. The assembly methods are tested for breakdown (V(b)), durability, and alignment. Demonstration of ion manipulation is shown with a 1 mm Bradbury-Nielsen gate, 500 mum Einzel lens, 500 mum coaxial ring ion trap, and reflectron optics. Data are presented showing the resolution, attenuation, and performance of each of these devices. We demonstrate advantages and disadvantages of this technology and its applications to mass analysis.Entities:
Year: 2009 PMID: 19791934 DOI: 10.1063/1.3222980
Source DB: PubMed Journal: Rev Sci Instrum ISSN: 0034-6748 Impact factor: 1.523