Literature DB >> 19746048

Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser.

P Zorabedian, W R Trutna.   

Abstract

We compared the angular alignment tolerance and the tuning range of a novel interference-filter-tuned semiconductor external-cavity laser based on a degenerate resonator with characteristics similar to those of a conventional grating-tuned external-cavity laser using a 1300-nm In GaAsP Fabry-Perot laser with an antireflection-coated facet as the gain medium. The interference-filter cavity had a 260-fold greater alignment tolerance (+/-26 versus +/-0.1 mrad) and nearly the same tuning range (90 versus 110 nm) as the grating-tuned cavity.

Year:  1988        PMID: 19746048     DOI: 10.1364/ol.13.000826

Source DB:  PubMed          Journal:  Opt Lett        ISSN: 0146-9592            Impact factor:   3.776


  1 in total

1.  Construction and characterization of external cavity diode lasers for atomic physics.

Authors:  Kyle S Hardman; Shayne Bennetts; John E Debs; Carlos C N Kuhn; Gordon D McDonald; Nick Robins
Journal:  J Vis Exp       Date:  2014-04-24       Impact factor: 1.355

  1 in total

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