Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature.

Room-temperature continuous-wave operation of large-area (120 microm x 980 microm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm(2) (1900-microm cavity length), maximum slope efficiencies of about 0.8 W/A (600-microm cavity length), and optical power in excess of 270 mW/facet 900-microm cavity length) have been observed under pulsed conditions.