| Literature DB >> 19738301 |
Basant Chitara1, D S Ivan Jebakumar, C N R Rao, S B Krupanidhi.
Abstract
Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is approximately 7 V above room temperature.Entities:
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Year: 2009 PMID： 19738301 DOI： 10.1088/0957-4484/20/40/405205
Source DB: PubMed Journal: Nanotechnology ISSN： 0957-4484 Impact factor: 3.874