Literature DB >> 19736971

Giant, level-dependent g factors in InSb nanowire quantum dots.

Henrik A Nilsson1, Philippe Caroff, Claes Thelander, Marcus Larsson, Jakob B Wagner, Lars-Erik Wernersson, Lars Samuelson, H Q Xu.   

Abstract

We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to approximately 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(SO) = 280 mueV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.

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Year:  2009        PMID: 19736971     DOI: 10.1021/nl901333a

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  15 in total

1.  Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.

Authors:  G Katsaros; P Spathis; M Stoffel; F Fournel; M Mongillo; V Bouchiat; F Lefloch; A Rastelli; O G Schmidt; S De Franceschi
Journal:  Nat Nanotechnol       Date:  2010-05-02       Impact factor: 39.213

2.  Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot.

Authors:  Y Kanai; R S Deacon; S Takahashi; A Oiwa; K Yoshida; K Shibata; K Hirakawa; Y Tokura; S Tarucha
Journal:  Nat Nanotechnol       Date:  2011-07-24       Impact factor: 39.213

3.  Growth and optical properties of axial hybrid III-V/silicon nanowires.

Authors:  Moïra Hocevar; George Immink; Marcel Verheijen; Nika Akopian; Val Zwiller; Leo Kouwenhoven; Erik Bakkers
Journal:  Nat Commun       Date:  2012       Impact factor: 14.919

4.  Electrical control of single hole spins in nanowire quantum dots.

Authors:  V S Pribiag; S Nadj-Perge; S M Frolov; J W G van den Berg; I van Weperen; S R Plissard; E P A M Bakkers; L P Kouwenhoven
Journal:  Nat Nanotechnol       Date:  2013-02-17       Impact factor: 39.213

5.  Detection of Majorana fermions by Fano resonance in hybrid nanostructures.

Authors:  Jun-Jie Xia; Su-Qing Duan; Wei Zhang
Journal:  Nanoscale Res Lett       Date:  2015-05-19       Impact factor: 4.703

6.  InAs-mediated growth of vertical InSb nanowires on Si substrates.

Authors:  Tianfeng Li; Lizhen Gao; Wen Lei; Lijun Guo; Huayong Pan; Tao Yang; Yonghai Chen; Zhanguo Wang
Journal:  Nanoscale Res Lett       Date:  2013-07-24       Impact factor: 4.703

7.  Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.

Authors:  M T Deng; C L Yu; G Y Huang; M Larsson; P Caroff; H Q Xu
Journal:  Sci Rep       Date:  2014-12-01       Impact factor: 4.379

8.  Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer.

Authors:  Sònia Conesa-Boj; Dominik Kriegner; Xiang-Lei Han; Sébastien Plissard; Xavier Wallart; Julian Stangl; Anna Fontcuberta i Morral; Philippe Caroff
Journal:  Nano Lett       Date:  2013-12-18       Impact factor: 11.189

Review 9.  Indium Antimonide Nanowires: Synthesis and Properties.

Authors:  Muhammad Shafa; Sadaf Akbar; Lei Gao; Muhammad Fakhar-E-Alam; Zhiming M Wang
Journal:  Nanoscale Res Lett       Date:  2016-03-24       Impact factor: 4.703

10.  Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.

Authors:  Kan Li; Wei Pan; Jingyun Wang; Huayong Pan; Shaoyun Huang; Yingjie Xing; H Q Xu
Journal:  Nanoscale Res Lett       Date:  2016-04-26       Impact factor: 4.703

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